| 摘要 |
A method for forming a composite pattern including different types of patterns is described. A substrate having a material layer thereon is provided, and two or more masks each having at least one type of pattern thereon are provided, wherein an imaginary pattern defined by the overlap between the patterns of all of the masks includes the at least one type of pattern of each mask. The following steps (1)-(3) are then performed for multiple cycles, with a different mask being used in each cycle, until all of the masks have been used. In step (1), one mask is used to form one photoresist pattern over the substrate. In step (2), the material layer is etched using the photoresist pattern as a mask. In step (3), the photoresist pattern is removed.
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