发明名称 Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
摘要 A semiconductor chip includes a semiconductor substrate 126 , in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136 . A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141 , formed in the substrate oppositely adjacent a strained channel region 143.
申请公布号 US2006255365(A1) 申请公布日期 2006.11.16
申请号 US20060483913 申请日期 2006.07.10
申请人 KO CHIH-HSIN;LEE WEN-CHIN;YEO YEE-CHIA;LIN CHUN-CHIEH;HU CHENMING 发明人 KO CHIH-HSIN;LEE WEN-CHIN;YEO YEE-CHIA;LIN CHUN-CHIEH;HU CHENMING
分类号 H01L31/00;H01L21/336;H01L21/8238;H01L27/01;H01L29/78 主分类号 H01L31/00
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