| 摘要 |
PROBLEM TO BE SOLVED: To provide a synchronous semiconductor memory in which control to an automatic precharge command is facilitated and also a layout area is reduced. SOLUTION: In the synchronous semiconductor memory, a shift circuit (50a) which shifts an automatic precharge command signal (APC) for a prescribed clock cycle period is provided in a plurality of banks in common. Moreover, a bank control circuit (54a, 54b) which inactivates an internal operation activated signal (ACTIVE(A), ACTIVE(B)) to a corresponding bank according to the output signal of the shift circuit, the internal operation activated signal to the corresponding bank, internal access command signals (R(A), R(B), W(A), W(B)) to a bank different to the corresponding bank, and an automatic precharge command signal to the corresponding bank is provided in each bank. COPYRIGHT: (C)2007,JPO&INPIT
|
