发明名称 Photodiode array, method for manufacturing same, and radiation detector
摘要 A theme is to prevent the generation of noise due to damage in a photodetecting portion in a mounting process in a photodiode array, a method of manufacturing the same, and a radiation detector. In a photodiode array, wherein a plurality of photodiodes ( 4 ) are formed in array form on a surface at a side of an n-type silicon substrate ( 3 ) onto which light to be detected is made incident and penetrating wirings ( 8 ), which pass through from the incidence surface side to the back surface side, are formed for the photodiodes ( 4 ), the photodiode array ( 1 ) is arranged with a transparent resin film ( 6 ), which covers the formed regions of the photodiodes ( 4 ) and transmits the light to be detected, provided at the incidence surface side.
申请公布号 US2006255280(A1) 申请公布日期 2006.11.16
申请号 US20040548487 申请日期 2004.03.10
申请人 HAMAMATSU PHOTONICS K.K. 发明人 SHIBAYAMA KATSUMI
分类号 G01T1/20;G01T1/24;H01L27/146;H01L31/09;H01L31/10 主分类号 G01T1/20
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