Field effect transistor, e.g. complementary MOSFET, for system-on-chip circuit arrangement, has n-well region with doped region between drain and source regions such that region with resistance is formed between channel and doped regions
摘要
<p>A transistor has a gate region formed from polysilicon, and an n-well region (611) with a two-way doped region that is arranged between a drain region (652) and a source region such that a region with increased electrical resistance is formed between a channel region and the doped region. An electrical voltage divider arises by the electrical resistance region in such a way that a part of high voltage adjacent to the drain-region falls in the doped region. An independent claim is also included for the production of a field effect transistor.</p>
