NAND FLASH MEMORY DEVICE HAVING SHIELD LINE BETWEEN WORD LINE AND SELECTION LINE

摘要

A NAND flash memory device having a shield line between a word line and a selection line is provided to prevent a program inhibition cell from being programmed by reducing the line capacitance coupling between the word line and the selection line during the program operation. In a NAND flash memory device having a cell string structure, a word line is for applying a word line voltage to a memory cell. A selection line is for applying a selection voltage to a selection transistor connected to the memory cell in series. A shield line(SL1,SL2) is located between the word line and the selection line, and reduces the line capacitance coupling between the word line and the selection line during the program operation.