发明名称 High power AllnGaN based multi-chip light emitting diode
摘要 A light emitting diode chip having a substantially transparent substrate and having an aspect ratio, which defines an elongated geometry provides enhanced efficiency and brightness. Method for forming and operating the same are also disclosed.
申请公布号 US2006255349(A1) 申请公布日期 2006.11.16
申请号 US20060489888 申请日期 2006.07.20
申请人 LIU HENG 发明人 LIU HENG
分类号 H01L33/20;H01L33/38;H01L33/46 主分类号 H01L33/20
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