Temperature measurement device of power semiconductor device

摘要

A temperature measurement device of a power semiconductor device includes a plurality of temperature detecting diodes formed on a first chip having a power semiconductor device; and a detection circuit that is formed on a second chip having an integrated circuit that controls the power semiconductor device and is connected to the temperature detecting diodes; wherein the detection circuit detects a temperature of the power semiconductor device based on a difference between the forward voltages of the temperature detecting diodes when different values of current flow to the respective temperature detecting diodes.