发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
摘要 <p>A semiconductor device is provided with a semiconductor substrate; a circuit element formed on the semiconductor substrate; a multilayer wiring structure formed on the semiconductor substrate in a status where the structure is electrically connected with the circuit element; and a metal wall formed outside the multilayer wiring structure to surround the multilayer wiring structure. An uppermost layer of the metal wall is composed of a metal having aluminum as a main component, and the metal is embedded in a groove-shaped contact hole continuously extending over the outer circumference of the semiconductor substrate and is electrically connected with a lower layer metal wall.</p>
申请公布号 WO2006121129(A1) 申请公布日期 2006.11.16
申请号 WO2006JP309507 申请日期 2006.05.11
申请人 NEC CORPORATION;TADA, MUNEHIRO;OOTAKE, HIROTO;HAYASHI, YOSHIHIRO 发明人 TADA, MUNEHIRO;OOTAKE, HIROTO;HAYASHI, YOSHIHIRO
分类号 H01L21/3205;H01L23/52 主分类号 H01L21/3205
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