AUXILIARY TRANSISTOR GATE BIAS CONTROL SYSTEM AND METHOD

摘要

A circuit and method for modulating the gate bias voltage of a FET transistor (108) in an RF amplifier is disclosed. This circuit is used to dynamically control the gate bias of the auxiliary transistor (12) in a Doherty amplifier. The gate bias voltage is modulated so that it tracks the input signal amplitude. Dynamically modulating the gate bias of the auxiliary transistor in the Doherty amplifier improves the peak power and linearity, while maintaining good efficiency.