FLIP CHIP LIGHT EMITTING DIODE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To increase a current spreading effect and improve light emitting efficiency for a flip chip light emitting diode.

SOLUTION: The flip chip light emitting diode forms an n-type nitride semiconductor layer 31, an active layer 32, and a p-type nitride semiconductor layer 33 in sequence on an optical transparency substrate 30 with the predetermined crystal direction. A mesa area is formed in which a plurality of regions on the n-type nitride semiconductor layer are exposed with given widths. A light emitting structure 41 includes a groove 40 formed so that plurality of regions on the n-type nitride semiconductor layer located among the plurality of mesa areas are exposed with the given widths. This device also comprises a groove insulating layer 34 formed on the top surface over the groove, a p-type electrode 38 formed on an insulating layer 93 attached on the top of the p-type nitride semiconductor layer and on the top surface over the groove, and an n-type electrode 39 formed on the plurality of mesa areas of the light emitting structure.

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