| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound of a group 4 metal, such as titanium or zirconium which is suitable as a raw material used in a thin film-producing method, such as a CVD method or an ALD method, using a vaporized precursor, is easily thermally and/or oxidatively decomposed, when deposited into a thin film, has a low melting point, can be transported in a liquid state, has a large vapor pressure, can easily be vaporized, when vaporized or transported, and can easily control the composition of an obtained thin film, when producing the thin film of many components. SOLUTION: This metal compound is represented by the general formula (I) [R<SP>1</SP>to R<SP>7</SP>are each a 1 to 4C alkyl; A is a 1 to 4C alkanediyl; M is titanium, zirconium or hafnium atom; (m) is 1, 2 or 3]. COPYRIGHT: (C)2007,JPO&INPIT
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