METHOD FOR PRODUCING Ga2O3-BASED CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a Ga2O3-based crystal whose cleavage property is weakened and whose workability can be enhanced. SOLUTION: Aβ-Ga2O3single crystal 25 is produced by an EFG method where the (001) face of a seed crystal 20 is the growing face of a substrate and where a parallel direction to the c axis of the seed crystal 20 is a growing direction. As the cleavage property of the faces of (100) and (001) is improved, workability for cutting and the like in an LED element producing step can be enhanced and then the mass productivity of the substrate and an LED element can be increased. The superior crystal growth of a GaN-based semiconductor at the (100) face in a GaN-based LED element producing step can be obtained. COPYRIGHT: (C)2007,JPO&INPIT