发明名称 |
HIGH-DENSITY NONVOLATILE MEMORY ARRAY FABRICATED AT LOW TEMPERATURE COMPRISING SEMICONDUCTOR DIODES |
摘要 |
A memory cell is described suitable for use in a high-density monolithic three dimensional memory array. In preferred embodiments of the memory cell, a semiconductor junction diode formed of germanium or a germanium alloy which can be crystallized at relatively low temperature is formed disposed between conductors. The use of a low-temperature material allows the conductors to be formed of copper or aluminum, both low-resistivity materials that provide adequate current at very small feature size, allowing for a highly dense stacked array. |
申请公布号 |
WO2006121924(A2) |
申请公布日期 |
2006.11.16 |
申请号 |
WO2006US17525 |
申请日期 |
2006.05.05 |
申请人 |
SANDISK 3D LLC;HERNER, S. BRAD;DUNTON, SAMUEL V. |
发明人 |
HERNER, S. BRAD;DUNTON, SAMUEL V. |
分类号 |
H01L27/06;H01L27/102 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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