COMPOSITION AND PROCESS FOR ASHLESS REMOVAL OF POST-ETCH PHOTORESIST AND/OR BOTTOM ANTI-REFLECTIVE MATERIAL ON A SUBSTRATE
摘要
<p>An aqueous-based composition and process for removing photoresist and/or bottom anti-reflective coating (BARC) material from a substrate having such material(s) thereon. The aqueous-based composition includes a quaternary ammonium base, at least one co-solvent, and optionally a chelator. The composition achieves highefficiency removal of photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect on metal species on the substrate, such as copper, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.</p>
申请公布号
WO2006036368(A3)
申请公布日期
2006.11.16
申请号
WO2005US29510
申请日期
2005.08.19
申请人
ADVANCED TECHNOLOGY MATERIALS, INC.;MINSEK, DAVID, W.;BERNHARD, DAVID;BAUM, THOMAS, H.
发明人
MINSEK, DAVID, W.;BERNHARD, DAVID;BAUM, THOMAS, H.