METHOD FOR FORMING A NANO WIRE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

A nano wire forming method and a method for manufacturing a semiconductor device using the same are provided to simplify manufacturing processes and to reduce fabrication costs by using a partial etching process on a bulk semiconductor substrate. A trench is formed by etching partially a semiconductor substrate. An insulating pattern for filling the trench and covering selectively first and second regions is formed on the resultant structure. An opening portion is formed on the resultant structure by etching the substrate using the insulating pattern as an etch mask. A spacer is formed at sidewalls of the opening portion and insulating pattern. An isotropic etching process is preformed on a bottom portion of the opening to expose partially the insulating pattern of the trench to the outside. At this time, a nano wire(124) for contacting the second region is formed on the resultant structure.