| 摘要 |
A dielectric layer is provided to avoid crystallization of a dielectric layer by interposing a second dielectric layer between first and third dielectric layer made of the same kind of materials having a dielectric constant of at least 25 such that the second dielectric layer is made of a different material from those of the first and the third dielectric layers and has a lower crystallization rate from those of the first and third dielectric layers. A first dielectric layer(10) has a dielectric constant of at least 25. A second dielectric layer(20) is formed on the first dielectric layer, made of a material having a lower crystallization rate than that of the first dielectric layer. A third dielectric layer(30) is formed on the second dielectric layer, made of the same material as that of the first dielectric layer. The first and the third dielectric layers have a thickness that is not crystallized, made of one of a group composed of ZrO2, HfO2, La2O3 and Ta2O5.
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