发明名称 |
Method of manufacturing semiconductor device and semiconductor device |
摘要 |
Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1x10<SUP>20</SUP>/cm<SUP>3 </SUP>or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration, processing time required for doping is increased and throughput in a doping step is reduced, and thus this becomes a problem. The present invention is characterized in that impurity regions to which an element belonging to the group 18 of the periodic table is added are formed in a semiconductor film having a crystalline structure and gettering for segregating in the impurity regions a metal element contained in the semiconductor film is performed by heat treatment. Also, a one conductivity type impurity may be contained in the impurity regions.
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申请公布号 |
US2006255370(A1) |
申请公布日期 |
2006.11.16 |
申请号 |
US20060404923 |
申请日期 |
2006.04.17 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;NAKAMURA OSAMU;KAJIWARA MASAYUKI;KOEZUKA JUNICHI |
分类号 |
H01L27/148;H01L21/20;H01L21/322;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/786 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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