| 摘要 |
A method for transferring structures from a photomask into a photoresist layer is disclosed. In one embodiment, the method involves the patterning of a photoresist layer provided on a layer stack having a topology. In order to suppress standing waves in the photoresist layer and the resist swing effect, which causes variations in the feature sizes, a thin, conformal, organic antireflection layer is applied on the layer stack by means of a known CVD method. The photoresist layer can be patterned dimensionally accurately by means of the method. The method is particularly suitable for the patterning of photoresist layers which are provided for the implantation process of source/drain regions of transistors in semiconductor technology.
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