发明名称 Pixel with gate contacts over active region and method of forming same
摘要 The invention relates to a pixel and imager device, and method of forming the same, where the contacts to the gates of the transistors of the pixel are located over the active region of the pixel, e.g., the channel regions of the transistor gates. The location of the transistor gate contacts makes for a denser circuit for the pixel and allows the photosensor region to be increased in size relative to the pixel size.
申请公布号 US2006255381(A1) 申请公布日期 2006.11.16
申请号 US20050125246 申请日期 2005.05.10
申请人 MICRON TECHNOLOGY, INC. 发明人 MCKEE JEFFREY A.
分类号 H01L31/062 主分类号 H01L31/062
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