APPARATUS FOR PROCESSING SUBSTRATE WITH PLASMA

摘要

A plasma processing apparatus is provided to prevent an abnormal discharge phenomenon by maintaining a high vacuum state in the lift pin hole by a high-vacuum buffer tank so that process gas is prevented from penetrating through the lift pin hole. A base plate, an insulation member, a cooling plate and a lower electrode are sequentially stacked in the lower region of a chamber to form an electrode part(114). A plurality of lift pins(124) are formed in lift pin holes penetrating a plurality of positions of a predetermined part of the electrode part, putting down a processed article on the electrode part or lifting up the processed article. A high-vacuum buffer tank(142) interconnects the lift pin holes by a pumping line(144) and is installed in the pumping line to be opened only when process gas is introduced into the chamber so that a high vacuum state is maintained in the lift pin hole. A high vacuum pump(140) operates all the time so that the inside of the high-vacuum buffer tank reaches a high vacuum state, installed at an end of the pumping line. A switching valve(146) is installed in the pumping line positioned before the high-vacuum buffer tank.