发明名称 |
GAS TREATING DEVICE AND GAS TREATING METHOD |
摘要 |
A gas processing apparatus 1 includes a processing container 2 for applying a processing to a wafer W while using a processing gas, a mount table 5 arranged in the processing container 2 to mount the wafer W, a shower head 22 arranged corresponding to the wafer W on the mount table 5 to discharge the processing gas into the processing container 2 and exhausting means 132 for exhausting the interior of the processing container 2. The shower head 22 has first gas discharging holes 46 arranged corresponding to the wafer W mounted on the mount table 5 and second gas discharging holes 47 arranged around the first gas discharging holes 46 independently to discharge the processing gas to the peripheral part of the wafer W. Thus, with a uniform gas supply to a substrate, it is possible to perform a uniform gas processing. <IMAGE> |
申请公布号 |
EP1422317(A4) |
申请公布日期 |
2006.11.15 |
申请号 |
EP20020751825 |
申请日期 |
2002.08.01 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KASAI, SHIGERU;YAMAMOTO, NORIHIKO;TANAKA, MASAYUKI |
分类号 |
C23C16/455;C23C16/14;C23C16/44;H01L21/285;H01L21/768 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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