发明名称 GAS TREATING DEVICE AND GAS TREATING METHOD
摘要 A gas processing apparatus 1 includes a processing container 2 for applying a processing to a wafer W while using a processing gas, a mount table 5 arranged in the processing container 2 to mount the wafer W, a shower head 22 arranged corresponding to the wafer W on the mount table 5 to discharge the processing gas into the processing container 2 and exhausting means 132 for exhausting the interior of the processing container 2. The shower head 22 has first gas discharging holes 46 arranged corresponding to the wafer W mounted on the mount table 5 and second gas discharging holes 47 arranged around the first gas discharging holes 46 independently to discharge the processing gas to the peripheral part of the wafer W. Thus, with a uniform gas supply to a substrate, it is possible to perform a uniform gas processing. <IMAGE>
申请公布号 EP1422317(A4) 申请公布日期 2006.11.15
申请号 EP20020751825 申请日期 2002.08.01
申请人 TOKYO ELECTRON LIMITED 发明人 KASAI, SHIGERU;YAMAMOTO, NORIHIKO;TANAKA, MASAYUKI
分类号 C23C16/455;C23C16/14;C23C16/44;H01L21/285;H01L21/768 主分类号 C23C16/455
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