The present disclosure relates to a post-etch cleaning treatment (20) for a semiconductor device such as a FeRAM. The treatment comprises providing an etchant comprising both a fluorine compound and a chlorine compound, and applying the etchant to the semiconductor device in a wet cleaning process. <IMAGE>
申请公布号
EP1195803(B1)
申请公布日期
2006.11.15
申请号
EP20010119044
申请日期
2001.08.07
申请人
AGILENT TECHNOLOGIES, INC. (A DELAWARE CORPORATION)
发明人
WILLS MIRKARIMI, LAURA;GILBERT, STEPHEN R.;XING, GUOQIANG;SUMMERFELT, SCOTT;SAKODA, TOMOYUKI;MOISE, TED
