SURFACE HARDENING METHOD OF PHOTO RESIST PATTERN

摘要

A method for hardening surface of photoresist pattern is provided to possibly etch a base material film even when the photoresist pattern is formed with reduced thickness by reacting the photoresist pattern with a curing catalyst to harden surface of the photoresist pattern. The method comprises the steps of: forming photoresist pattern(104) on a semiconductor substrate(100); and curing surface of the photoresist pattern by reacting the photoresist pattern with a curing catalyst. The surface curing step is performed by ammonia plasma treatment of the surface of the photoresist pattern. The curing catalyst is slantly introduced to top of the photoresist pattern to cure top portion of the photoresist pattern(104') and lateral part of the surface of the photoresist pattern adjacent to the cured top portion.