发明名称 Process of forming a capacitative audio transducer
摘要 A process of forming a capacitive audio transducer, preferably having an all-silicon monolithic construction that includes capacitive plates defined by doped single-crystal silicon layers. The capacitive plates are defined by etching the single-crystal silicon layers, and the capacitive gap therebetween is accurately established by wafer bonding, yielding a transducer that can be produced by high-volume manufacturing practices.
申请公布号 US7134179(B2) 申请公布日期 2006.11.14
申请号 US20040010862 申请日期 2004.12.13
申请人 DELPHI TECHNOLOGIES, INC. 发明人 FREEMAN JOHN E.;BANEY WILLIAM J.;BETZNER TIMOTHY M.;CHILCOTT DAN W.;CHRISTENSON JOHN C.;VAS TIMOTHY A.;QUEEN GEORGE M;LONG STEPHEN P
分类号 H04R31/00;B81C1/00;H01L21/00;H04R19/00;H04R25/00 主分类号 H04R31/00
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