| 摘要 |
An insulated gate type semiconductor device comprised of a semiconductor layer serving as an active region isolated from a semiconductor substrate by a substrate isolation insulating film and a T-shaped gate electrode comprised of a trunk-shaped main gate electrode and a crosspiece-shaped conductor pattern provided on the semiconductor layer, wherein the thickness of the gate insulating film directly under the crosspiece-shaped conductor pattern is made greater than the thickness of the gate insulating film directly under the main gate electrode, whereby it is possible to prevent short-circuits between electrodes, prevent short-circuits between separators, and prevent an increase of the parasitic capacitance.
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