发明名称 |
Reliable low-k interconnect structure with hybrid dielectric |
摘要 |
An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.
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申请公布号 |
US7135398(B2) |
申请公布日期 |
2006.11.14 |
申请号 |
US20040901868 |
申请日期 |
2004.07.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FITZSIMMONS JOHN A.;GRECO STEPHEN E.;LEE JIA;GATES STEPHEN M.;SPOONER TERRY;ANGYAL MATTHEW S.;HICHRI HABIB;STANDAERT THEORDORUS E.;BIERY GLENN A. |
分类号 |
H01L21/4763;H01L21/768;H01L23/532 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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