Deposition method for wiring thin film

摘要

An Al₃Ti film having a large amount of dissolved Si is deposited on a semiconductor substrate to form a laminate with an Al wiring film, and heat treatment is performed at a temperature of at least 400° C., to thereby absorb excessive Si into the Al₃Ti film and so prevent the occurrence of Si nodules. By depositing Al film at a temperature of at least 400° C. at the time of depositing the Al wiring film on the Al₃Ti film, excessive Si is caused to be absorbed in the Al₃Ti film. Further, at the time of depositing a Ti film on the semiconductor substrate and depositing the Al wiring film, the Al film is deposited at a temperature of a least 400° C., there is reaction between the Ti film within the laminate, causing an Al₃Ti film to be produced, and excessive Si is absorbed in the Al₃ Ti film produced.