发明名称 Semiconductor device and method of manufacturing the same, semiconductor wafer, circuit board and electronic instrument
摘要 A resin layer is formed on a semiconductor substrate in which a plurality of integrated circuits are formed. In the surface of the resin layer, a plurality of recesses are formed. On the resin layer, an interconnecting line is formed to pass along any of the recesses. The semiconductor substrate is cut into a plurality of semiconductor chips. Each recess is formed to have an opening width less than the thickness of the interconnecting line, and a depth of at least 1 mum.
申请公布号 US7135354(B2) 申请公布日期 2006.11.14
申请号 US20040763858 申请日期 2004.01.21
申请人 SEIKO EPSON CORPORATION 发明人 ITO HARUKI
分类号 H01L21/44;H01L23/52;H01L21/301;H01L21/3205;H01L21/4763;H01L21/60;H01L21/78;H01L23/12;H01L23/28;H01L23/31;H01L23/485 主分类号 H01L21/44
代理机构 代理人
主权项
地址