发明名称 |
Semiconductor device and method of manufacturing the same, semiconductor wafer, circuit board and electronic instrument |
摘要 |
A resin layer is formed on a semiconductor substrate in which a plurality of integrated circuits are formed. In the surface of the resin layer, a plurality of recesses are formed. On the resin layer, an interconnecting line is formed to pass along any of the recesses. The semiconductor substrate is cut into a plurality of semiconductor chips. Each recess is formed to have an opening width less than the thickness of the interconnecting line, and a depth of at least 1 mum.
|
申请公布号 |
US7135354(B2) |
申请公布日期 |
2006.11.14 |
申请号 |
US20040763858 |
申请日期 |
2004.01.21 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
ITO HARUKI |
分类号 |
H01L21/44;H01L23/52;H01L21/301;H01L21/3205;H01L21/4763;H01L21/60;H01L21/78;H01L23/12;H01L23/28;H01L23/31;H01L23/485 |
主分类号 |
H01L21/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|