| 摘要 |
A semiconductor memory device is provided to control the enable period of a sense amplifier control signal differently by automatically selecting a mode according to bonding option during a packaging process according to the mode of each structure. A number of sense amplifiers sense and amplify data stored in a memory cell. A sense amplifier control part(26) generates a driving voltage driving the sense amplifiers. A discrimination part generates a configuration discrimination signal indicating I/O structure and then outputs the configuration discrimination signal to the sense amplifier control part. The sense amplifier control part controls the level of the driving voltage according to the configuration discrimination signal.
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