发明名称 |
Fluxless bumping process |
摘要 |
A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF<SUB>4 </SUB>and SF<SUB>6</SUB>, and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device. |
申请公布号 |
US7134199(B2) |
申请公布日期 |
2006.11.14 |
申请号 |
US20020170745 |
申请日期 |
2002.06.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
SU CHAO-YUAN;LIN CHIA-FU;LEE HSIN-HUI;CHEN YEN-MING;CHING KAI-MING;CHEN LI-CHIH;KUO WEN-CHANG;JIAN YUE-YING |
分类号 |
H01R9/00;H01L21/60;H01L23/485;H05K3/00 |
主分类号 |
H01R9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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