MANUFACTURING METHOD OF T OR GAMMA GATE ELECTRODE

摘要

A method for fabricating a T-type or gamma-type gate electrode is provided to form a step-type hole on an insulation layer easily and stably wherein the upper part of the hole has a width greater than that of the lower part of the hole, by using a photoresist layer having different sensitivity. A first insulation layer(140) is deposited on a semiconductor substrate(100). At least two photoresist layers having different sensitivity are coated on the first insulation layer and are patterned to have openings with different sizes. The first insulation layer is etched by using the photoresist layers as an etch mask to form a step-type hole(175) in which a part of the hole adjacent to the substrate is narrower than the upper part of the hole. After a photoresist layer is formed on the first insulation layer, an opening is formed in a manner that the photoresist layer has a T-type or gamma-type gate head pattern. A gate recess process is performed on the gate pattern. Gate metal(195) is deposited on the gate pattern, and the photoresist layers are removed. The thickness of the first insulation layer is adjusted to control the height of the leg of the gate.