发明名称 NANO SEMICONDUCTOR SHEET, MANUFACTURING METHOD OF THE NANO SEMICONDUCTOR SHEET, MANUFACTURING METHOD OF TFT USING THE NANO SEMICONDUCTOR SHEET, MANUFACTURING METHOD OF FLAT PANEL DISPLAY USING THE NANO SEMICONDUCTOR SHEET, THIN FILM TRANSISTOR, AND FLAT PANEL DISPLAY DEVICE
摘要 <p>A nano semiconductor sheet is provided to fabricate a TFT and a flat panel display apparatus, especially organic light emitting devices at room temperature or a low temperature without performing a high temperature process by using a nano particle in a channel of a TFT. A second film in which a plurality of nano particles(10) are arranged in almost parallel with each other is positioned on at least one surface of a first film or in the first film. The nano particles are a P-type semiconductor or an N-type semiconductor, including a nano wire, a nano bar or a nano ribbon.</p>
申请公布号 KR100647699(B1) 申请公布日期 2006.11.13
申请号 KR20050080021 申请日期 2005.08.30
申请人 SAMSUNG SDI CO., LTD. 发明人 LEE, SANG MIN;YANG, NAM CHOUL
分类号 H01L29/786 主分类号 H01L29/786
代理机构 代理人
主权项
地址