| 摘要 |
FIELD: microelectronics; memory device manufacture. ^ SUBSTANCE: novelty is that insulator layer in proposed memory location whose storage element incorporates first electrode, second electrode, and insulator layer disposed between mentioned electrodes is made of N > 1 separate polymeric films of essentially equal thickness d < 80 mum produced from same material and in similar way, and piled. ^ EFFECT: enhanced insulator capability of charging and holding electric charges between electrodes. ^ 3 cl, 1 dwg |
