Gate structure of a non-volatile memory device and method of manufacturing the same,申请号KR20050027080-传众专利搜索

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发明名称	Gate structure of a non-volatile memory device and method of manufacturing the same
摘要
申请公布号	KR100644405(B1)	申请公布日期	2006.11.10
申请号	KR20050027080	申请日期	2005.03.31
申请人		发明人
分类号	H01L27/115;H01L21/31;H01L21/336	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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