发明名称 FERRO-ELECTRIC INFORMATION STORAGE DEVICE AND METHOD OF INFORMATION WRITE AND READ
摘要 A ferroelectric information storage device and a method for storing/reproducing the information are provided to simplify the constitution, reduce the weight and size, and increase the capacity of the information storage device. A ferroelectric layer(10) has a first surface and a second surface opposite to the first surface. A common electrode layer(11) is formed on the first surface of the ferroelectric layer(10). First and second conductive track layers(12a,12b) are formed on the second surface of the ferroelectric layer(10), and apart from each other at a predetermined distance. A conductive roller(20), of which both sides are supported by the first and second conductive track layers(12a,12b), is movably installed along the conductive track layers(12a,12b). A ferromagnetic layer(30) forms a magnetic field in the vicinity of the conductive roller(20).
申请公布号 KR100647334(B1) 申请公布日期 2006.11.10
申请号 KR20050081318 申请日期 2005.09.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG, SEUNG BUM;YOO, JIN GYOO;JUNG, JU HWAN;BUEHLMANN SIMON
分类号 G11B9/14;G11B11/26 主分类号 G11B9/14
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