METHOD OF FABRICATING A FINFET

摘要

A FinFET structure and method of forming a FinFET device. The method includes: (a) providing a semiconductor substrate (100), (b) forming a dielectric layer (110) on a top surface (105) of the substrate (100); (c) forming a silicon fin (135) on a top surface (115) of the dielectric layer (110); (d) forming a protective layer (160) on at least one sidewall (150A) of the fin (135); and (e) removing the protective layer (160) from the at least one sidewall (150A) in a channel region (175) of the fin (135). In a second embodiment, the protective layer (160) is converted to a protective spacer (210A).