| 摘要 |
<p>In a photoelectric conversion device using a first conductivity type semiconductor substrate having convex and concave portions formed on its surface, the device being characterized in that it comprises at least, a second conductivity type semiconductor layer formed on the surface of the first conductivity type semiconductor substrate, a front electrode connected to the second conductivity type semiconductor layer, and a rear electrode formed on the rear surface of the first conductivity type semiconductor substrate, the second conductivity type semiconductor layer being in contact with the front electrode and becoming thinner as it goes farther from the contacted area.</p> |
