发明名称 METHOD FOR MANUFACTURING NANOWIRE CHEMFET SENSOR DEVICE UTILIZING SELECTIVE DEPOSITION OF NANOWIRE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing nanowire CHEMFET sensor mechanism. <P>SOLUTION: The method for manufacturing nanowire CHEMFET sensor mechanism includes a process for preparing a silicon substrate 34; a process for depositing a polycrystalline ZnO seed layer 42 on the silicon substrate; a process for forming and etching a pattern on the polycrystalline ZnO seed layer; a process for depositing an insulating layer 46 on the polycrystalline ZnO seed layer and the silicon substrate; a process for forming and etching a pattern on the insulating layer to form contact holes to the source region and the drain region; a process for metallizing the contact holes to form contacts 54 and 56 to the source region and the drain region; a process for depositing a dielectric layer 58 to seal the insulating layer and the contacts; a process for forming and etching a pattern on the sealed layer to expose the polycrystalline ZnO seed layer; and a process for forming a ZnO nano-structure sensor device, by making a ZnO nano-structure 66 grow on the exposed ZnO seed layer. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006308559(A) 申请公布日期 2006.11.09
申请号 JP20060054088 申请日期 2006.02.28
申请人 SHARP CORP 发明人 CONLEY JOHN F JR;YOSHI ONO;STECKER LISA H
分类号 G01N27/414;B82B3/00;H01L29/78 主分类号 G01N27/414
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