发明名称 |
METHOD FOR MANUFACTURING NANOWIRE CHEMFET SENSOR DEVICE UTILIZING SELECTIVE DEPOSITION OF NANOWIRE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing nanowire CHEMFET sensor mechanism. <P>SOLUTION: The method for manufacturing nanowire CHEMFET sensor mechanism includes a process for preparing a silicon substrate 34; a process for depositing a polycrystalline ZnO seed layer 42 on the silicon substrate; a process for forming and etching a pattern on the polycrystalline ZnO seed layer; a process for depositing an insulating layer 46 on the polycrystalline ZnO seed layer and the silicon substrate; a process for forming and etching a pattern on the insulating layer to form contact holes to the source region and the drain region; a process for metallizing the contact holes to form contacts 54 and 56 to the source region and the drain region; a process for depositing a dielectric layer 58 to seal the insulating layer and the contacts; a process for forming and etching a pattern on the sealed layer to expose the polycrystalline ZnO seed layer; and a process for forming a ZnO nano-structure sensor device, by making a ZnO nano-structure 66 grow on the exposed ZnO seed layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2006308559(A) |
申请公布日期 |
2006.11.09 |
申请号 |
JP20060054088 |
申请日期 |
2006.02.28 |
申请人 |
SHARP CORP |
发明人 |
CONLEY JOHN F JR;YOSHI ONO;STECKER LISA H |
分类号 |
G01N27/414;B82B3/00;H01L29/78 |
主分类号 |
G01N27/414 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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