| 摘要 |
PROBLEM TO BE SOLVED: To prevent increasing on-resistance and achieve high breakdown voltage in a semiconductor device. SOLUTION: A high breakdown voltage semiconductor is formed on an SOI board equipped with a support board 101, an insulated film 102, and an active layer 103; it comprises an n-type well area 105 and a p-type drain offset area 104 formed on the active layer 103, a p-type source area 106 formed in the well area 105, a p-type drain area 108 formed in a drain offset area 104, a gate insulated film 110 at least formed in an area between a source area 106 in the active layer 103 and a drain offset area 104, a gate electrode 111 formed on a gate insulated film 110, and an n-type deep well area 112 formed beneath the drain offset area 104; and the concentration peak of an n-type impurity for forming the deep well area 112 exists in a position deeper than that of a p-type impurity for forming the drain offset area 104. COPYRIGHT: (C)2007,JPO&INPIT
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