| 摘要 |
PROBLEM TO BE SOLVED: To provide an IGBT which increases a degree of freedom of a wiring layout, and controls an operation of each element to become uneven, compared with the case that each of the other area 3b is independent. SOLUTION: In a floating potential structured trench gate type IGBT which has two regions 3a and 3b electrically divided by a trench 5 inside a p-type base region 3, an n<SP>+</SP>-type emitter region 4 is formed in the region 3a and is connected to an emitter electrode 8 electrically, and the other region 3b is insulated from the emitter electrode 8. The two regions 3a and 3b are plurally arranged alternately, and the other region 3b of the two regions takes a plane layout of one shape to be consecutive throughout an entire cell region. COPYRIGHT: (C)2007,JPO&INPIT
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