| 摘要 |
PROBLEM TO BE SOLVED: To lower the write voltage in an anti-fuse using two bipolar transistors. SOLUTION: The semiconductor device has a first transistor Q1 having a first emitter electrode 8, a first base electrode 6, and a first collector electrode 7 above a first region. A base leading polysilicon 9 for connecting the first base electrode 6 to the first base region passes over a second region provided outside the first region to add a resistance value. COPYRIGHT: (C)2007,JPO&INPIT |
