发明名称 Filling deep and wide openings with defect-free conductor
摘要 Relatively large openings or features in integrated circuit metallization or packaging vias are filled by two plating or electrodeposition processes in sequence. The first electrodeposition process conformally lines the large, high aspect ratio features to define an inner cavity. The second electrodeposition process uses a different solution to bottom-up fill the inner cavity left by the first electrodeposition process. Conformality is typically induced by use of levelers during the first electrodeposition, while accelerators and suppressors may be used to promote bottom-up fill during the second electrodeposition, although either process may employ any of the three additives.
申请公布号 US2006252254(A1) 申请公布日期 2006.11.09
申请号 US20060351838 申请日期 2006.02.09
申请人 BASOL BULENT M 发明人 BASOL BULENT M.
分类号 H01L21/4763 主分类号 H01L21/4763
代理机构 代理人
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