| 摘要 |
Flash memory devices having a cell string structure. According to the present invention, the size of a first group of memory cells connected to a first word line and a second group of memory cells connected to a last word line is formed greater than that of a third group of memory cells respectively connected to the remaining word lines other than the first and last word lines. Accordingly, the program speed of the first and second groups of the memory cells can be improved.
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