发明名称 |
Reflective-type mask blank for EUV lithography and method for producing the same |
摘要 |
A reflective-type mask blank for EUV lithography for reducing the EUV ray reflectance at the absorbing layer and a method for producing the mask blank are presented. A reflective-type mask blank for EUV lithography comprising a substrate and a reflective layer for reflecting EUV light and an absorbing layer for absorbing EUV light, which are formed on the substrate in this order, the reflective-type mask blank for EUV lithography being characterized in that the absorbing layer is a Cr layer of low EUV ray reflectance deposited by an ion beam sputtering method.
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申请公布号 |
US2006251973(A1) |
申请公布日期 |
2006.11.09 |
申请号 |
US20060401863 |
申请日期 |
2006.04.12 |
申请人 |
ASAHI GLASS COMPANY LIMITED |
发明人 |
TAKAKI SATORU;HAYASHI KAZUYUKI |
分类号 |
G21K5/00;B32B9/00;B32B17/06;G03F1/22;G03F1/24;G03F1/54 |
主分类号 |
G21K5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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