| 摘要 |
A gate conductor including a gate line, a gate pad and a gate electrode is formed on a substrate. A gate insulating layer, a semiconductor layer, a doped amorphous silicon layer and a conductive layer are deposited in sequence, and then a photoresist film pattern is formed thereon. The photoresist film pattern includes a first portion positioned between the to be formed source electrode and drain electrode, a second portion thicker than the first portion, and the third portion with no photoresist. A data conductor including a data line, a data pad, a source electrode, a drain electrode and a conductor pattern for a storage capacitor, an ohmic contact layer pattern and a semiconductor pattern are formed by etching the conductive layer, the doped amorphous silicon layer and the semiconductor layer using the photoresist film pattern. A plurality of color filters of red, green and blue having apertures exposing part of the drain electrode are formed thereon. A passivation layer made of acryl-based organic material having excellent planarization characteristic is formed thereon. A pixel electrode, an auxiliary gate pad and an auxiliary data pad connected to the drain electrode, the gate pad and the data pad via contact holes, respectively, are formed on the passivation layer. The contact hole exposing the drain electrode is located within the aperture. |
