| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact which can be preferably used for usage where low volume resistivity is required and metal contamination is hated, for example as a component suitable for a semiconductor producing device. <P>SOLUTION: The aluminum nitride sintered compact has a mean crystal grain diameter of 15-30 μm, an oxygen concentration of 0.1-0.6 mass%, a metallic impurity amount of 100 ppm or less and volume resistivity at a room temperature of 1.0×10<SP>8</SP>Ωcm or less. The sintered compact can be obtained by sintering a formed body containing an aluminum nitride powder having a mean particle diameter of 0.1-20 μm and an auxiliary sintering agent of 0-0.1 pt.mass to the aluminum nitride powder under a neutral or a reducing atmosphere until the mean particle diameter reaches 15-30 μm. <P>COPYRIGHT: (C)2007,JPO&INPIT |
