| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent occurrence of a crack when subjected to a reflow furnace. <P>SOLUTION: A semiconductor device 1 consists of a semiconductor device 2, an external electrode 3b, and a mounting pad 4b. A non-illustrated bonding agent is applied nearly in the center of the mounting pad 4b so that the semiconductor device 2 may be fixed. The mounting pad 4b has a rectangle shape, and the shape of two sides 7a, 7b of the four sides have wavelike shapes. Ag layers 3a and 4a for connecting with wire 5 are formed in the upper surface of an external electrode 3b and a mounting pad 4b, and Sn-Pb layers 3c and 4c are formed in the undersurface. The semiconductor device 2 and the external electrode 3b are electrically connected with the wire 5 of Au. The semiconductor device 2, the wire 5, the external electrode 3b, and the mounting pad 4b are closed with resin 6 which consists of an epoxy resin etc. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
