| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing gallium nitride compound semiconductor laser elements that ensure large slope efficiency and lower drive voltage even when gallium nitride substrates with large off angles are used, maintain high yields, reduce variations, and emit high-power violaceous lights and compound semiconductor laser elements produced using this method. SOLUTION: This method for manufacturing gallium nitride compound semiconductor laser elements is featured by using either an inclined plane with an absolute value of degree from 0.16 to 5.0 towards a <1-100> direction on a (0001) Ga surface or a surface where a square root of the value (A<SP>2</SP>+B<SP>2</SP>) is greater than or equal to 0.17 but less than or equal to 7.0, when assuming a (0001) Ga surface off angle towards <1-100> direction to be "A" and a (0001) Ga surface off angle towards <11-20> direction to be "B" as a crystal growth surface on a gallium nitride compound substrate, and growing an active layer at a rate faster than or equal to 0.5Å/second but less than or equal to 5.0Å/second. COPYRIGHT: (C)2007,JPO&INPIT
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