| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method for controlling an etching selective ratio between a material containing tantalum and silicon nitride easily, and to provide a manufacturing method of an electronic device by using this method. SOLUTION: In the etching method, a treating body is etched including a first part made of material containing tantalum and a second part made of silicon nitride. The etching method is characterized by etching the second part by using a first mixing gas, in which nitrogen is added to the etching gas. COPYRIGHT: (C)2007,JPO&INPIT
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